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Indium phosphide
Other names	Indium(III) phosphide
Identifiers
CAS number	22398-80-7 Y
Properties
Molecular formula	InP
Molar mass	145.792 g/mol
Appearance	black cubic crystals
Density	4.81 g/cm3, solid
Melting point	1062 °C (1335 K)
Solubility in water	slightly soluble in acids[1]
Band gap	1.344 eV (300 K; direct)
Electron mobility	5400 cm2/(V·s) (300 K)
Thermal conductivity	0.68 W/(cm·K) (300 K)
Refractive index (nD)	3.1 (infrared); 3.55 (632.8 nm)[2]
Structure
Crystal structure	Zinc blende
Coordination geometry	Tetrahedral
Thermochemistry
Std enthalpy of formation ΔfHo298	-88.7 kJ/mol
Standard molar entropy So298	59.8 J/(mol·K)
Specific heat capacity, C	45.4 J/(mol·K)[3]
Hazards
MSDS	External MSDS
EU Index	Not listed
Main hazards	Toxic, hydrolysis to phosphine
Related compounds
Other anions	Indium nitride Indium arsenide Indium antimonide
Other cations	Aluminium phosphide Gallium phosphide
Related compounds	Indium gallium phosphide Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide
Y (what is this?)  (verify) Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa)
Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

References

External links

• Extensive site on the physical properties of indium phosphide (Ioffe institute)
• InP conference series at IEEE
• Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier (2006 news)